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| Preliminary data Low VCE(sat) High speed IGBT with Diode VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V IC25 50 A 50 A VCE(sat) 3.5 V 4.0 V TO-247 AD (IXGH) Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, T VJ = 125C, RG = 33 Clamped inductive load, L = 100 H TC = 25C Maximum Ratings 1000 1000 20 30 50 25 100 ICM = 50 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C Features International standard package JEDEC TO-247 AD l IGBT and anti-parallel FRED in one package l 2nd generation HDMOSTM process l Low VCE(sat) - for minimum on-state conduction losses l MOS Gate turn-on - drive simplicity l Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM l l G C E C = Collector TAB = Collector G = Gate E = Emitter Mounting torque (M3) 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25C TJ = 125C 5.5 500 8 100 25N100U1 25N100AU1 3.5 4.0 V V A mA nA l l l l l l BVCES VGE(th) ICES I GES VCE(sat) IC IC = 4.5 mA, VGE = 0 V = 500 A, VCE = VGE AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Advantages l V V l l Saves space (two devices in one package) Easy to mount (isolated mounting screw hole) Reduces assembly time and cost (c) 1996 IXYS All rights reserved 95587 (9/96) IXGH25N100U1 IXGH25N100AU1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 8 15 S TO-247 AD Outline gfs I C = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff VCE = 25 V, VGE = 0 V, f = 1 MHz 2750 270 50 130 25 55 100 200 500 500 5 180 60 90 pF pF pF nC nC nC ns ns ns ns mJ 1 = Gate 2 = Collector 3 = Emitter Tab = Collector IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, T J = 25C IC = IC90, VGE = 15 V, L = 300 H, VCE = 0.8 VCES, RG = Roff = 33 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 300 H VCE = 0.8 V CES, RG = Roff = 33 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES , higher TJ or increased RG 25N100AU1 25N100AU1 td(on) tri Eon td(off) tfi Eoff 25N100U1 25N100AU1 25N100U1 25N100AU1 100 250 3.5 720 950 800 10 6 1000 3000 ns ns mJ ns ns ns mJ mJ RthJC RthCK 0.25 0.62 K/W K/W Reverse Diode (FRED) Symbol VF Test Conditions IF = IC90, VGE = 0 V, Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.5 V Pulse test, t 300 s, duty cycle d 2 % IRM trr IF = IC90, VGE = 0 V, -diF/dt = 240 A/s VR = 540 V IF = 1 A; -di/dt = 100 A/s; VR = 30 V RthJC TJ =125C TJ =25C 16 120 35 50 18 A ns ns 1 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGH25N100U1 IXGH25N100AU1 (c) 1996 IXYS All rights reserved IXGH25N100U1 IXGH25N100AU1 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGH25N100U1 IXGH25N100AU1 Fig.11 Maximum Forward Voltage Drop 100 80 Fig.12 Peak Forward Voltage VFR and Forward Recovery Time tFR 50 40 TJ = 125C IF =37A VFR 1000 800 600 400 tfr Current - Amperes 60 TJ = 100C 30 20 10 0 40 TJ = 150C 20 0 0.5 TJ = 25C 200 0 600 1.0 1.5 2.0 2.5 3.0 3.5 0 100 200 300 400 500 Voltage Drop - Volts diF /dt - A/s Fig.13 Junction Temperature Dependence off IRM and Qr 1.4 1.2 1.0 0.8 IRM Fig.14 Reverse Recovery Chargee 4 TJ = 100C VR = 540V max. IF = 30A Qr - nanocoulombs Normalized IRM /Q r 3 typ. IF = 60A IF = 30A IF = 15A 2 0.6 0.4 0.2 0.0 0 40 80 120 160 Qr 1 0 1 10 100 1000 TJ - Degrees C diF /dt - A/s Fig.15 Peak Reverse Recovery Current 50 40 TJ = 100C VR = 540V Fig.16 Reverse Recovery Time 0.8 max. IF = 30A TJ = 100C VR = 540V max. IF = 30A 30 20 10 0 200 400 600 typ. IF = 60A IF = 30A IF = 15A trr - nanoseconds 0.6 typ. IF = 60A IF = 30A IF = 15A IRM - Amperes 0.4 0.2 0.0 0 200 400 600 diF /dt - A/s diF /dt - A/s (c) 1996 IXYS All rights reserved tfr - nanoseconds VFR - Volts IXGH25N100U1 IXGH25N100AU1 Fig.17 Diode Transient Thermal resistance junction to case 1.00 RthJC - K/W 0.10 0.01 0.001 0.01 0.1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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